●Advanced Process Technology
●Ultra Low On-Resistance
●Dynamic dv/dt Rating
●175 degree Operating Temperature
●Fast Switching
●Fully Avalanche Rated
●Lead-Free
Deskripsyon
Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
Pake TO-220 la pi pito pou tout aplikasyon komèsyal-endistriyèl nan nivo dissipation pouvwa a apeprè 50 Watt. Rezistans tèmik ki ba ak pri pake ki ba nan TO-220 kontribye nan akseptasyon lajè li nan tout endistri a.
Baj popilè: irf540npbf, Lachin, Swèd, manifaktirè, wholesale, nan stock
